icte5 thru icte18c, 1n6373 thru 1n6386 vishay general semiconductor document number: 88356 revision: 07-may-10 for technical questions within your region, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com www.vishay.com 1 t rans z orb ? transient voltage suppressors devices for bi-direction applications for bi-directional types, us e c suffix (e.g. icte18c). electrical characteristics a pply in both directions. features ? glass passivated chip junction ? available in uni-directional and bi-directional ? 1500 w peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? solder dip 275 c max. 10 s, per jesd 22-b106 ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? find out more about vishays automotive grade product requirements at: www.vishay.com/applications typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mo sfet, signal lines of sensor units for consumer, computer, industrial and telecommunication. mechanical data case: molded epoxy body ov er passivated junction molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs compliant, commercial grade base p/nhe3 - rohs compliant, automotive grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 201 class 1a whisker test, he3 suffix meets jesd 201 class 2 whisker test polarity: for uni-directional types the color band denotes cathode end, no marking on bi-directional types notes (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2 (2) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum primary characteristics v wm 5.0 v to 18 v p ppm 1500 w p d 6.5 w i fsm 200 a t j max. 175 c case style 1.5ke maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit peak pulse power dissipation with a 10/1000 s waveform (1) (fig. 1) p ppm 1500 w peak pulse current with a 10/1000 s waveform (1) (fig. 3) i ppm see next table a power dissipation on infinite heatsink at t l = 75 c (fig. 8) p d 6.5 w peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) i fsm 200 a maximum instantaneous forward voltage at 100 a for uni-directional only v f 3.5 v operating junction and storage temperature range t j , t stg - 55 to + 175 c www.datasheet.co.kr datasheet pdf - http://www..net/
icte5 thru icte18c, 1n6373 thru 1n6386 vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com document number: 88356 revision: 07-may-10 2 notes (1) c suffix indicates bi-directional (2) icte5 and 1n6373 are not available as bi-directional (3) clamping factor: 1.33 at full rated power; 1.20 at 50 % rated power; clamping factor: the ratio of the actual v c (clamping voltage) to the v br (breakdown voltage) as measured on a specific device note (1) automotive grade electrical characte ristics (jedec registered data) (t a = 25 c unless otherwise noted) jedec type number general semiconductor part number stand-off voltage v wm (v) minimum breakdown voltage at 1.0 ma v br (v) maximum reverse leakage at v wm i d (a) maximum clamping voltage at i pp = 1.0 a v c (v) maximum clamping voltage at i pp = 10 a v c (v) maximum peak pulse current i pp (a) uni-directional types 1n6373 (2) icte5 (2) 5.0 6.0 300 7.1 7.5 160 1n6374 icte8 8.0 9.4 25.0 11.3 11.5 100 1n6375 ICTE10 10.0 11.7 2.0 13.7 14.1 90 1n6376 icte12 12.0 14.1 2.0 16.1 16.5 70 1n6377 icte15 15.0 17.6 2.0 20.1 20.6 60 1n6378 icte18 18.0 21.2 2.0 24.2 25.2 50 bi-directional types 1n6382 icte8c 8.0 9.4 50.0 11.4 11.6 100 1n6383 ICTE10c 10.0 11.7 2.0 14.1 14.5 90 1n6384 icte12c 12.0 14.1 2.0 16.7 17.1 70 1n6385 icte15c 15.0 17.6 2.0 20.8 21.4 60 1n6386 icte18c 18.0 21.2 2.0 24.8 25.5 50 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode icte5-e3/54 0.968 54 1400 13" diameter paper tape and reel icte5he3/54 (1) 0.968 54 1400 13" diameter paper tape and reel www.datasheet.co.kr datasheet pdf - http://www..net/
icte5 thru icte18c, 1n6373 thru 1n6386 vishay general semiconductor document number: 88356 revision: 07-may-10 for technical questions within your region, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com www.vishay.com 3 ratings and characteristics curves (t a = 25 c unless otherwise noted) figure 1. peak pulse power rating curve figure 2. pulse power or current vs. initial junction temperature figure 3. pulse waveform t d - pulse width (s) p ppm - peak pulse power (kw) 1.0 s 10 s 100 s 1.0 ms 10 ms 0.1 s 0.1 1 10 100 non-repetitive pulse waveform shown in fig. 3 t a = 25 c 100 75 50 25 0 0 25 50 75 100 125 150 175 200 peak pulse p ower (p pp ) or current (i pp ) derating in percentage, % t j - initial temperature (c) 0 50 100 150 t r = 10 s peak value i ppm half value - i ppm i pp 2 t d 10/1000 s waveform as defined by r.e.a. 0 1.0 2.0 3.0 4.0 t - time (ms) i ppm - peak pulse current, % i rsm t j = 25 c pulse width (t d ) is defined as the point where the peak current decays to 50 % of i ppm figure 4. typical junction capacitance uni-directional figure 5. typical junction capacitance figure 6. maximum non-repetitive forward surge current uni-directional only v br - breakdown voltage (v) c j - junction capacitance (pf) 100 1000 10 000 100 000 10 1.0 100 200 measured at zero bias measured at stand-off voltage v wm t j = 25 c f = 1.0 mhz v sig = 50 mv p-p v br - breakdown voltage (v) c j - junction capacitance (pf) 100 1000 10 000 100 000 10 1.0 100 200 bi-directional type measured at zero bias measured at stand-off voltage v wm non-repetitive pulse waveform shown in fig. 3 t a = 25 c number of cycles at 60 hz i fsm - peak forward surge current (a) 1 5 10 50 100 10 50 100 200 t j = t j max. 8.3 ms single half sine-wave www.datasheet.co.kr datasheet pdf - http://www..net/
icte5 thru icte18c, 1n6373 thru 1n6386 vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com document number: 88356 revision: 07-may-10 4 package outline dimensions in inches (millimeters) figure 7. typical characteristics clamping voltage v c - clamping voltage (v) i pp - peak pulse current (a) 10 50 1 10 8 61214161820222426 28 uni-directional only t a = 25 c icte5 icte8 ICTE10 icte12 icte18 icte15 figure 8. power derating curve 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 25 50 75 100 125 150 175 200 p d - power dissipation (w) t l - lead temperature (c) l = 0.375" (9.5 mm) lead lengths 1.0 (25.4) min. 1.0 (25.4) min. 0.375 (9.5) 0.285 (7.2) 0.210 (5.3) 0.190 (4.8) dia. 0.042 (1.07) 0.038 (0.96) dia. case style 1.5ke www.datasheet.co.kr datasheet pdf - http://www..net/
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